Method of rinsing and drying semiconductor wafers in a chamber with a movable side wall

ABSTRACT

A method for rinsing and drying semiconductor wafers. The method includes placing a semiconductor wafer into a chamber of a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and moving a portion of the chamber, such as a portion of a wall of the chamber, substantially vertically relative to the remainder of the chamber to remove rinse liquid therefrom. The method may also include directing a drying fluid onto a surface of the rinse liquid to facilitate drying of the rinsed semiconductor wafers as rinse liquid is being removed from the chamber.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 09/299,312,filed Apr. 26, 1999 now U.S. Pat. No. 5,985,041, which is a continuationof application Ser. No. 09/035,328, filed Mar. 5, 1998, now U.S. Pat.No. 5,913,981, issued Jun. 22, 1999.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to apparatus and methods for rinsing anddrying semiconductor wafers and other semiconductor substrates that areused to fabricate semiconductor dies, which are also known as integratedcircuit dies. Particularly, the present invention relates to apparatusfor rinsing and drying semiconductor wafers without requiring physicaltransfer of the individual wafers between locations between the rinsingand drying steps. More particularly, the present invention relates toapparatus and methods for rinsing and drying wafers which utilize adrying compound. A preferred apparatus according to the inventionevacuates water slowly from the semiconductor wafers during drying ofthe wafers. A preferred drying compound for use in the apparatus andmethod of the present invention is a non-heated isopropyl alcohol (IPA)vapor. The present invention also relates to a chamber in which wafersare rinsed and dried.

2. Background of Related Art

A continuing goal of integrated circuit processing is to produce wafershaving ever-fewer and ever-smaller particles of contamination persemiconductor wafer. Another goal of integrated circuit processing is toclean the ever-thinner, ever-larger (i.e., which are increasing from 6to 8 to 10 inches in diameter), state-of-the-art semiconductor waferswithout breaking or otherwise damaging them. Several processes andapparatus have been developed for removing different types ofcontamination from the surfaces of semiconductor wafers, including,without limitation, silicon, gallium arsenide, silicon-on-glass (SOG),silicon on sapphire (SOS), silicon on insulator (SOI), and othersemiconductor wafers known in the art. Many such processes involve theuse of chemicals. The need for atomically clean surfaces requires thecomplete rinsing of all chemicals and debris from the wafer surface.Clean wafers are essential at all stages of the fabrication process butare especially necessary before any of the operations performed at hightemperature.

Several rinsing and drying methods are known and used in the relevantindustry. One such method is known as the "quick dump" method, whereinthe wafers are placed into a rinse tank and submerged in de-ionized (DI)water or any other suitable rinse liquid to wash solvent, rinse acidsand/or rinse bases, and contaminants from the surface of the wafers.Some dump rinsers spray the water onto the wafers. The water is thenquickly removed from the rinse tank. Other dump rinsers have a flowmeter, which controls the rate at which water exits the chambers. Therinse-dump process may be repeated several times in order to furtherdecrease the number of contaminants on the wafers.

Even with repetitive cycles, the "quick dump" method often leavesparticles on the wafer, making that method undesirable for manyapplications. This is principally due to the rapid deployment of waterfrom the rinse tank, which often transfers many of the contaminants backonto the wafer. The quick discharge of water from the rinse tank and theresultant quick flow of air into the tank also create friction with thesurface of the wafers, which tends to generate an electrostatic chargeon the surfaces of the wafers, increasing their tendency to attractcontaminants. The number of contaminant particles often correlates tolower die yields on the semiconductor wafer. Further, many quick dumprinsers are not equipped to dry the wafers, which requires physicaltransfer of the wafers to a separate device and increases the cleaningtime and cost of the finished product. Use of separate rinsing anddrying devices may also increase the possibility of additionalcontaminants adhering to the wafers.

Devices known as overflow washers have also been used in the industry.Overflow washers include a rinse tank which has a continuous supply of arinse liquid, such as DI water. The rinse liquid flows into manyoverflow rinsers through the bottom of the rinse tank. As the tank fillswith fresh, clean water, dirtier water is removed from the upper portionof the rinse tank. Many overflow washers also include a bubbler, whichintroduces a stream of nitrogen bubbles into the bottom of the rinsetank to enhance the rinsing action of the flowing water. As the nitrogenbubbles move up through the water and past the wafers, the bubblesfacilitate the mixing of the chemicals on the wafer surface with therinse liquid.

Many overflow washers employ resistivity meters to determine theduration of the rinsing process. Such meters determine the resistivityof the rinse liquid that exits the rinse tank. Chemicals which were usedto clean the wafers dissolve into the rinse liquid and act as chargedparticles. In this fashion, the resistivity meter detects the presenceof chemicals based on the resistivity of the rinse liquid. For example,if the rinse liquid entering the rinser has a resistivity of 18 megaohms, a reading of 15 to 18 mega ohms on the exit side indicates thatthe wafers are cleaned and rinsed.

Due to its utilization of large volumes of rinse liquid, overflowrinsing is perceived as undesirable to many in the industry. Further,many overflow rinsers are not capable of drying the wafers. Thus, dryingrequires movement of the wafers to a dryer, which increases the cleaningtime, processing cost, and the possibility that additional contaminantswill adhere to the surface of the wafers. Due to these shortcomings,many overflow rinsers do not adequately reduce the level ofcontamination on the wafer surfaces.

Another type of rinsing apparatus which has found widespread use in theindustry is the cascade washer, which includes a series of adjacentoverflow washers. In use, fresh rinse liquid flows into the first,highest washer of the series. As water fills the first overflow washerand then discharges, it enters the second, which fills and thendischarges into the third, and so forth. Wafers are first placed in thelast washer of the series, which has the most contaminated rinse liquidsupply from the cleaning of one or more preceding wafers or sets ofwafers. The wafers are then sequentially repositioned into each adjacentwasher until they are eventually washed in the first overflow washer,which has the freshest and cleanest water supply.

The effectiveness of many cascade rinsers is often limited because"dirty water" may be present in the first chamber. The dirty watertypically includes residual acid and particles from preceding wafers orsets of wafers. Some of the residual particles tend to attach to thewafer, which can cause defects in an integrated circuit fabricatedthereon, thereby reducing the number of good dies on a typical wafer. Asnoted above, cascade rinsers also require repeated movement of thewafers from chamber to chamber, which increases the cleaning time.Generally, cascade rinsers lack a drying mechanism, making such rinsersfurther undesirable due to the aforementioned contamination problemsassociated with handling of the wafers. The wafers must also bephysically transferred to a drying apparatus. Subsequent dryingoperations may also introduce more particles onto the wafers, which maydecrease the number of good dies on each of the wafers.

U.S. Pat. No. 5,635,053, issued in the names of Aoki et al. (the "'053patent"), discloses another method and apparatus for rinsing wafers. Themethod of the '053 patent involves rinsing with an anolyte or acatholyte electrolytic ionized water (EIW) which has been produced fromDI water. The pH of the EIW is selected based upon the cleaning agentsused on the wafers in preceding cleaning steps.

The rinsing method of the '053 patent is undesirable due to theadditional costs associated with electrolytically ionizing water. Inaddition, the apparatus described in the '053 patent does not dry thewafers, introducing the potential problems identified above with otherdevices which do not rinse and dry wafers.

After the wafers have been rinsed, they must be dried. The presence ofany amount of residual water on the surface of a wafer (even atoms) hasthe potential of interfering with each subsequent operation. Knownmethods for drying wafers include spin rinse drying, the use of hotwater, and the use of drying chemicals.

Spin rinse dryers have been used in the art to dry wafers or to rinseand dry wafers. Spin rinse dryers employ a combination of rinse liquidspray and centrifugal force to remove contaminants and rinse liquid fromthe wafer. Many spin rinse dryers also spray hot nitrogen gas onto thewafers during spinning. U.S. Pat. No. 5,022,419, issued to Thompson etal., discloses an automated spin rinse dryer with a removable heatedchamber bowl which is preferably mounted at an angle to facilitate thegravitational flow of effluent drainage from the chamber. That devicealso includes a broken chip collector, an acidity sensor, and an exhaustmanifold assembly.

Many spin rinse dryers tend to generate undesirable amounts of staticcharge during their spin cycles. Some of the static charge collects onthe surfaces of the wafers, attracting contaminants thereto. Many spinrinse dryers also tend to damage or break the delicate larger and/orthinner wafers that are presently being used in the industry.

Another drying technique which is used in the industry includes the useof hot DI water. Hot DI water evaporates more quickly than DI water atambient temperatures (i.e., room temperature DI water). However, the useof hot DI water is undesirable in that it may introduce stains on thewafer. Additionally, hot DI water is an aggressive solvent that oftendeteriorates equipment, thereby increasing maintenance operation costs.Heating the DI water also adds to the cost of cleaning the wafers.

Processes and apparatus which utilize drying fluids are also used in theindustry for drying the rinse liquids from wafers. Conventionalisopropyl alcohol (IPA) mist or fog systems and full displacementsystems are capable of producing a wafer having a very dry surfacefinish, a very low particle contamination count, and little or noelectrostatic charging of the wafers. In many IPA systems, the wafermust be transferred from a separate rinse apparatus to a self-containeddrying module. Many IPA drying apparatus direct a pressurized IPA streamto a heated plate in order to produce a hot IPA mist or fog which driesthe wafer. When wafers are dried in systems which utilize cleaningfluids, little or no electrostatic charge develops on the wafers.

The following U.S. patents disclose methods for drying semiconductorwafers using drying fluids: U.S. Pat. No. 5,653,045, issued to Ferrell(the "'045 patent"); U.S. Pat. No. 5,634,978, issued to Mohindra et al.(the "'978 patent"); and U.S. Pat. No. 5,571,337, issued to Mohindra etal. (the "'337 patent"). The '045 patent discloses a method andapparatus for drying semiconductor wafers with a mist or fog of dryingfluid. The '978 and '337 patents each disclose a method and apparatus inwhich wafers are immersed in a water-containing liquid, thewater-containing liquid is displaced with a gaseous mixture, and adrying fluid is pulsed at the edges of the wafers to remove liquidtherefrom.

However, IPA and many other cleaning fluids are highly flammable. Thus,special safety precautions are necessary to avoid fires when heatingsuch cleaning fluids. Some such dryers utilize large quantities ofdrying fluids, which can pose health and environmental hazards.Additionally, large quantities of some hot solvents can be incompatiblewith certain resist patterned wafers.

What is needed is a method and apparatus for rinsing and dryingsemiconductor wafers that effectively reduces levels of contaminantsremaining on the wafers. A wafer-cleaning method and apparatus thatcreate little or no static charge on the wafers and that adequatelyclean relatively large and thin, state-of-the-art wafers without tendingto damage or break the wafers are needed. There is a further need for amethod and apparatus that eliminate the need for transferring wafersbetween rinsing and drying steps, reduce the amounts of rinse liquidsand drying fluids consumed and otherwise reduce costs associated withcleaning wafers.

SUMMARY OF THE INVENTION

The apparatus and method of the present invention address each of theforegoing needs. The present invention includes an apparatus for rinsingand drying semiconductor wafers in a manner which reduces the level ofcontaminants which remain on the surface of the wafer. The apparatusprovides improved control over the removal rate of rinse liquid incomparison to that afforded by many devices in the prior art. Further,little or no electrostatic charge is generated on the surface of thewafers during either rinsing or drying. Relatively large and thin wafersmay be rinsed and dried in the apparatus according to this invention,with reduced damage or breakage when compared with many conventionalrinsing and drying systems. The apparatus of this invention eliminatesthe need for physically transferring wafers to a different locationbetween rinsing and drying steps and reduces the amount of rinse liquidsand drying fluids consumed, which also reduces costs associated withcleaning semiconductor wafers. The invention also includes a method forrinsing and drying wafers with the apparatus of the present invention.

The apparatus of the present invention includes a housing which containsa rinse/dry chamber, a rinse liquid injection assembly directed towardthe rinse/dry chamber, a drying fluid injection assembly directed towardthe rinse/dry chamber and a drain. The rinse/dry chamber is a watertightchamber which includes a base and end and side walls extending upwardlyfrom the perimeter of the base. A section of at least one of the end orside walls lowers at a desired rate relative to the base. Preferably,both of the side walls descend relative to the base. The base of therinse/dry chamber is preferably adapted to securingly engage a waferboat. The rinse liquid injection assembly of the preferred embodiment ofthe apparatus directs a pressurized liquid spray over the substantiallyflat surfaces of each of the wafers carried by a carrier that isplaceable therein. Similarly, the drying fluid injection assemblydirects drying fluid at the substantially flat surfaces of each of thewafers placed in the rinse/dry chamber.

The present invention also provides an apparatus which effectivelyremoves contaminants from the surfaces of semiconductor wafers. Apreferred embodiment of the apparatus according to the present inventionsprays a high pressure stream of rinse liquid onto the substantiallyflat surfaces of the wafers placed therein. As the rinse/dry chamberbecomes filled with rinse liquid, the side walls are lowered tofacilitate the removal of the rinse liquid from the wafers. Preferably,concurrently with the removal of water from the wafers, the drying fluidinjection assembly injects drying fluid onto the rinse liquid surface tofacilitate the removal of rinse liquid from the wafer surfaces.Preferably, the process is repeated, if necessary, to further decreasethe level of contamination on the wafers. In another use of theapparatus of the present invention, the rinse/dry chamber may be filledwith rinse liquid prior to placement of the wafers therein.Consequently, the apparatus of the present invention effectively removescontaminants from the semiconductor wafers placed therein.

Reduced levels of electrostatic charge on the surfaces of the wafers arealso desired. Electrostatic charges on the surfaces of semiconductorwafers are usually generated by friction on those surfaces. Preferably,the rinse/dry chamber wall is lowered at a very slow rate to removerinse liquid from the wafers. Thus, friction caused by rapid rinseliquid removal is minimized. Advantageously, the wafers also remainstationary during drying. Thus, little, if any, air current is generatedover the surfaces of the wafers, which further reduces friction againstthe wafers. Therefore, it is a consequent advantage that the apparatusof the present invention generates little or no electrostatic charge onthe surfaces of the wafers rinsed and dried therein.

A device is also needed to effectively rinse and dry relatively thin andlarge wafers without breaking or otherwise damaging the wafers.Preferably, the pressure with which the apparatus of this inventiondirects rinsing fluid on the surfaces of the wafers is variable. Thus,the pressure is adjustable to a level which adequately cleans the waferswithout damaging them. Similarly, the streams of rinsing fluid areoriented to effectively clean the surfaces of the semiconductor waferswhile reducing the likelihood of damaging the same. The apparatus of thepresent invention also dries wafers with drying fluids, including,without limitation, isopropyl alcohol, propylene, and other dryingfluids which have a lower surface tension than the surface tension ofthe rinse liquid. The wafers remain stationary during drying. The wafersalso remain stationary in the rinse/dry chamber during the rinsing anddrying steps, eliminating the need for transferring the wafers from arinsing device to a drying device. Consequently, the apparatus of thepresent invention reduces the incidence of wafer damage caused duringrinsing, drying, and physical transferring of the wafers in accordancewith conventional practice.

A reduction in the costs associated with cleaning wafers is also desiredby those in the industry, as a reduction in cleaning costs reduces theoverall fabrication cost of the final semiconductor die products. Theapparatus of the present invention eliminates the need for transferringwafers from a rinsing device to a drying device. The apparatus alsocreates little or no electrostatic charge on the wafers, which tends tofurther reduce contamination of the dies and, correspondingly, increasethe number of good dies on a wafer. The apparatus of this inventioneffectively rinses and dries with inexpensive rinse liquids and dryingfluids and utilizes lower amounts of such rinse liquids and dryingfluids. Thus, cleaning costs are reduced with use of the apparatus ofthe present invention. Specifically, costs and contamination related tothe physical transfer of wafers between rinsing and drying steps areeliminated by the method and apparatus of the present invention.Similarly, costs are further reduced since the apparatus and method ofthe present invention use smaller amounts of rinse liquids and dryingfluids relative to some presently used apparatus.

Other advantages of the present invention will become apparent to thoseof ordinary skill in the relevant art through a consideration of theappended drawings and the ensuing description.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a perspective view of a preferred embodiment of a rinse dryeraccording to the present invention;

FIG. 2 is a cross-section taken through line 2--2 of FIG. 1;

FIG. 3a is a perspective cutaway view of a preferred embodiment of arinse/dry chamber for use in the rinse dryer of the present invention;

FIG. 3b is a sectional view illustrating a variation of the embodimentof the rinse/dry chamber shown in FIG. 3a, with the side walls in apartially lowered position;

FIG. 3c is a partial top plan view of the variation of the rinse/drychamber shown in FIG. 3b, which does not illustrate a semiconductorwafer, a carrier or a tray;

FIG. 4 is a perspective cutaway view of a second preferred embodiment ofa rinse/dry chamber for use in the rinse dryer of the present invention;

FIG. 4a is a cross-section of the embodiment shown in FIG. 4, with thewall in a lowered position;

FIG. 5 is a perspective cutaway view of a third preferred embodiment ofa rinse/dry chamber for use in the rinse dryer of the present invention;

FIG. 5a is a cross-section of the embodiment shown in FIG. 5, with thewall in a lowered position;

FIG. 6 is a cross-section taken through line 2--2 of FIG. 1, showing thewall in a partially lowered position and water flowing from the chamber;and

FIG. 7 is a cross-section taken through line 2--2 of FIG. 1, showing apreferred embodiment of a rinse liquid injection assembly and a bubbler.

DETAILED DESCRIPTION OF THE INVENTION

With reference to FIGS. 1 and 2, a preferred embodiment of the drop sidewafer rinse dryer 100 according to the present invention is shown.Referring to FIG. 2, rinse dryer 100 includes a base 112 with side walls114, 118 (FIG. 3a) and end walls 116, 120 disposed about and extendingupwardly from the perimeter thereof to define a rinse/dry chamber 111.Side walls 114, 118, or a portion thereof, descend and ascend relativeto base 112 while preferably remaining in contact therewith to holdwater in chamber 111 during descent of the wall. The upper edges of sidewalls 114, 118 are preferably serrated or saw tooth-configured in orderto facilitate the smooth flow of liquids thereover. Rinse dryer 100 alsoincludes a rinse liquid injection assembly 122 and a drying fluidinjection assembly 124, both of which are directed toward base 112.Rinse dryer 100 may also include a gas injection assembly 140.

Preferably, chamber 111 and portions of rinse liquid injection assembly122 and drying fluid injection assembly 124 are contained within anouter housing 101. Outer housing 101 also includes a drain 102 at thebottom thereof for removing fluids, vapors and the like from the outerhousing 101. A resistivity meter 103, of the types which are known inthe relevant art, may be positioned in drain 102 to measure theresistivity of the rinse liquid as it drains from outer housing 101.Outer housing 101 may also include an exhaust conduit 104 for removal ofvapors and gases therefrom under a pressure differential. Preferably,wafers 105 are loaded onto a carrier 107, then inserted into outerhousing 101 through a door 106 (shown in FIG. 1) positioned on the sideof the outer housing. However, the door may be located on any part ofthe outer housing, such as at the top thereof, in order to facilitatethe insertion of a loaded wafer carrier 107 into a pre-filled chamber111. Preferably, the dimensions and placement of door 106 allow for theready insertion of wafers 105 into outer housing 101 and onto base 112without damage to the wafers.

Preferably, base 112 is configured to hold and securely engage a wafercarrier 107 of a conventional type known and used in the industry,including, without limitation, flats, slabs, slotted flats, cradles,slotted cradles, and others. Base 112 may also include a removable tray121, which is located above the base and beneath a wafer boat placedthereon to catch and hold fragments of wafers that may be broken off ofwafers 105 during rinsing and drying thereof. Preferably, tray 121 isformed from a mesh, screen, or a substantially flat element whichotherwise defines apertures that permit the flow of liquids, such aswater, therethrough.

Side walls 114, 118 and end walls 116, 120 preferably meet at the twoadjacent sides of their lateral edges. The adjacent lateral edges ofside walls 114, 118 and end walls 116, 120 may be fixedly attached toone another, as shown in FIG. 3a, or they may slide relative to eachother and form a watertight seal when each of them is in a raised orpartially raised position, as shown in FIGS. 3b and 3c.

With continued reference to FIGS. 3b and 3c, end walls 116' and 120'include vertical slots 113 formed therein, adjacent each lateral edge ofend walls 116', 120'. Each of slots 113 is configured to receive theadjacent lateral edges of side walls 114', 118'. An elastomeric seal 115is disposed within each of slots 113 to impart chamber 111' withwatertightness as side walls 114', 118' are in the raised positionrelative to base 112'. Alternatively, seals 115 may be configured aslabyrinth seals and disposed within each of slots 113 or in the cornerformed between the adjacent lateral edges of a side wall and end wall. Asuitable elastomeric seal 115 material is durable, flexible, forms atight contact with each of the surfaces it abuts, and withstandsrepeated and prolonged exposure to the rinse liquids, drying fluids,gases, other chemicals, temperatures, pressures and other conditions towhich the apparatus of the invention is exposed. Preferred materials forsuch use include, without limitation, silicone rubber, other rubbers andelastomeric materials which have the above-identified properties.

Upwardly and downwardly moveable portions of side walls 114', 118' areoperatively connected to an actuator 126', which controls the ascent anddescent of those parts of the wall. Actuator 126' may comprise apneumatic cylinder, an hydraulic cylinder, a stepper motor, a screwdrive, or any other type of suitable actuation mechanism. Preferably,the rate at which actuator 126' lowers side walls 114', 118', or aportion thereof, is adjustable, which facilitates modification of therate at which water flows over the upper edge of the wall and out ofchamber 111' as the wall is lowered relative to base 112'. The rinse/dryapparatus 110' depicted in FIG. 3a employs a similar type of actuator,which is associated with side walls 114, 118 or end walls 116, 120 inthe same fashion that actuator 126' is connected to side walls 114',118'.

Preferably, the upper edge of side walls 114', 118', or the portionthereof, which ascends and descends relative to base 112' descends belowthe location of the bottom-most edge of a wafer 105 positioned incarrier 107 resting on base 112'. Thus, the surface of rinsing fluid onbase 112' may be lowered below the bottom edge of wafers 105.

With continued reference to FIGS. 3b and 3c, one or more seal elements128' are disposed between base 112' and side walls 114' , 118' to form awatertight seal therebetween. Seal elements 128' facilitate theretention of liquid within chamber 111' while side walls 114', 118' arein the raised position, and as the side walls are being lowered relativeto base 112'. Thus, seal elements 128' are preferably disposed about theouter periphery of base 112'. A suitable seal element 128' material hasthe same properties described above in reference to elastomeric seal115, and may comprise the elastomeric materials described above inreference to elastomeric seal 115. Seal elements 128' may be of roundcross-section, or comprise a flap or lip, as shown, for compliantcontact with moving side walls 114', 116'. Chamber 111 (see FIG. 3a)includes similar seal elements 128.

FIG. 4 shows a second preferred embodiment of a rinse/dry chamber 211according to the present invention, wherein the chamber includes a base212, end walls 216, 220 that extend upwardly from the perimeter of thebase, and collapsible side walls 214, 218, which are upwardly extendablearound the perimeter of the base. Side walls 214, 218 and end walls 216,220 each collapse in an accordion-like manner and each of the lateraledges of side walls 214, 218 are preferably joined to the two adjacentend walls 216, 220, with a flexible, collapsible material. Side walls214, 218 and end walls 216, 220 are preferably made from a flexible,durable, water-impermeable material which will withstand repeated andprolonged exposure to the rinse liquids, drying fluids, gases, otherchemicals, temperatures, pressures and other conditions to which thewall will be exposed in the apparatus of the present invention.Materials such as coated nylon fabrics, coated flexible metal meshes,thermoplastic films, and others are useful for making side walls 214,218 and end walls 216, 220.

The lower edge of each of side walls 214, 218 and end walls 216, 220forms a watertight seal with base 212. The upper edge of at least aportion of side walls 214, 218, which is operatively connected with anactuator (not shown), is movable upwardly and downwardly with respect tobase 212. End walls 216,220, or a portion of either of them, may also beoperatively connected with an actuator 126' (see FIGS. 3b and 3c). Theactuator may comprise a pneumatic cylinder, an hydraulic cylinder, astepper motor, a screw drive, or any other suitable actuation device,such as those previously described in conjunction with the rinse/dryapparatus 110' of FIGS. 3a and 3b.

Chamber 211 may also include a removable tray 221, disposed upon base212. A wafer carrier 107, which carries wafers 105, secures to base 212above tray 221. Removable tray 221 has the same basic configuration andserves the same function as tray 121, disclosed above in reference toFIG. 2. FIG. 4a is a sectional view showing side walls 214, 218 in alowered position.

FIG. 5 illustrates a third preferred embodiment of rinse/dry chamber311, wherein a base 312 is surrounded by side walls 314, 318 and endwalls 316, 320. Side walls 314, 318 fold or roll beneath the base as itis lowered relative thereto. In the illustrated embodiment, side walls314 and 318 each have a plurality of slats 315a, 315b, 315c, etc. and317a, 317b, 317c, etc., respectively. Preferably, adjacent slats 315aand 315b, 315b and 315c, etc. and 317a and 317b, 317b and 317c, etc.scalingly engage one another and are hingedly interconnected with eachother in a tambour configuration. Alternatively, as shown in FIG. 5a,slats 315' and 317' may be bonded to a liquid impermeable sheet or film319'. With reference to FIGS. 5 and 5a, as sides 314 and 318 are loweredrelative to base 312, the sides will wrap or roll under the base,eliminating the requirement for a substantial amount of space beneaththe base that would be required by embodiments having a rigid wall. FIG.5a shows side walls 314 and 318 rolled on spindles 313 beneath base 312.

Preferably, a sealing element 328 (not shown), such as seal element 128'described above in reference to FIGS. 3b and 3c, is located between eachside wall 314, 318 and base 312 to form a watertight barrier between thebase and each of the side walls as each such side wall is lowered (seeFIG. 5). Thus, seal element 328 is preferably disposed along each edgeof the base which is adjacent to a rollable side (e.g., the edges ofbase 312 that are adjacent to sides 314 and 318). Similarly, comer seals330a, 330b, 330c and 330d, which are located at each of the verticaledges of side walls 314 and 318, are formed from similar materials tomaintain the water-tightness of chamber 311 as the sides are lowered.Sealing mechanism 328 and corner seals 330a, 330b, 330c and 330d areeach preferably made from a flexible, durable material that willwithstand repeated and prolonged exposure to the rinse liquids, dryingfluids, gases, other chemicals, temperatures, pressures and otherconditions to which the sealing mechanism and corner seals will beexposed within the apparatus of this invention.

An actuator 326 is operatively connected to side walls 314 and 318 toraise and lower the side walls relative to base 312. Actuatorsmechanisms which are useful in the apparatus of the present inventioninclude those discussed above in reference to FIGS. 1 through 3c.Actuator 326 for side walls 314 and 318 preferably comprises a variablespeed electric motor for simplicity.

Preferably, chamber 311 also includes a removable tray 321, disposedupon base 312. A wafer carrier 107, which carries wafers 105, secures tobase 312 above tray 321. Removable tray 321 has the same basicconfiguration and serves the same function as tray 121, disclosed abovein reference to FIG. 2.

Although FIGS. 3a-c, 4 and 5 show specific, preferred embodiments of therinse/dry chamber, each having four sides, walls having shapes withthree or more walls, or round, oval, elliptical, and other shapes ofwalls are also within the scope of the present invention. Similarly, thenumber of side walls that descend relative to the base may vary. Sidewalls having only a portion thereof which descends relative to the baseare also within the scope of the present invention.

Referring now to FIG. 6, which illustrates rinse dryer 10 with sidewalls 114, 118 in a partially lowered position relative to wafers 105and base 112. Water flows over the upper surfaces of the walls as theyarc lowered. Thus, as side walls 114, 118 are completely lowered, littleor no water will remain on wafers 105 or on base 112.

With continued reference to FIG. 6, rinse liquid injection assembly 122directs rinse liquid into chamber 111. Rinse liquid injection assembly122 includes one or more spray flow ports 123, which are also referredto herein as heads, a rinse liquid source 132, and one or more lines134, which transport rinse liquid from the source to the sprayers. Rinseliquid source 132 is preferably located outside of outer housing 101.Line 134 is preferably made from a flexible elastomeric tubing of thetypes known by those of ordinary skill in the relevant art.

A preferred embodiment of rinse liquid injection assembly 122 injectsrinse liquid into chamber 111 as a pressurized stream or spray.Preferably, the pressurized rinse liquid is directed over thesubstantially flat surfaces of each of the mutually parallel wafers 105to remove particulate contaminants therefrom. Thus, spray heads 123 ofrinse liquid injection assembly 122 arc preferably located within outerhousing 101 above chamber 111 and wafers 105 located therein.

In order to direct rinse liquid at the substantially flat surfaces ofeach wafer 105, rinse liquid injection assembly 122 includes a pluralityof spray heads 123a, 123b, 123c, etc. Spray heads 123 are each pointedin different directions to remove wash chemicals and contaminants fromthe surfaces of each of wafers 105. Alternatively, rinse liquidinjection assembly 122 includes one or more spray heads (not shown) thatare movable to several positions to direct a pressurized spray or streamof rinse liquid onto the surfaces of each of the wafers as the sprayheads traverse across the wafer group.

Preferably, the pressure with which the spray heads eject rinse liquidis variable, facilitating optimization of the pressure for rinsingdifferent types of wafers. For example, some existing spray heads ejectrinse liquids at pressures in the 2,000 to 4,000 psi range. However, therelatively larger and thinner wafers (i.e., eight inch and ten inchwafers) that are finding increased use in the industry may not withstandsuch high rinse pressures. Thus, the rinse pressure can be modified toremove contaminants from the surface of the wafers without damaging thewafers. Liquid spray heads, pressure adjustment mechanisms, and sprayhead movement devices which are known to those of ordinary skill in therelevant art are useful as the rinse liquid injector assembly 122 of theapparatus of the present invention.

FIG. 7 shows an alternative embodiment of rinse liquid injectionassembly 122', wherein rinse liquid is flowed into chamber 111 frombelow to fill the chamber. Injection assembly 122' includes one or moreflow ports 123', a rinse liquid source 132' and one or more lines 134'which transport rinse liquid from source 132' to the flow ports 123'.Preferably, source 132' is located outside of outer housing 101. Line134' is preferably a flexible tubing, such as the types known to thoseof ordinary skill in the relevant art, for transporting liquids such asthe rinse liquids that are used in the present invention. Rinse liquidflows into chamber 111 through flow ports 123', which extend throughbase 112, through one or more of side walls 114, 118, through one ormore of end walls 116, 120, or through a conduit passing over the one ormore of the side and/or end walls at one or more locations.

Rinse dryer 110' may also include an ozone (O₃) generator 149, which maybe operatively associated with rinse liquid injection assembly 122 tointroduce ozone into the rinse liquid. Ozone generators, such as thatmanufactured by Legacy Systems Incorporated (model no. LOG-6DT) and thatmanufactured by Sorbios, are useful in the apparatus of the presentinvention.

The rinse dryer 110' of the present invention may also include a bubbler150 to facilitate removal of contaminants from wafers 105. Such bubblersare known by those of ordinary skill in the relevant art. Typically,bubblers introduce a stream of bubbles of nitrogen or another inert gaseither into the bottom of the chamber or into the rinse liquid flowinginto the chamber to enhance the rinsing action of the rinse liquid. Asthe bubbles move up through the rinse liquid and past wafers 105, theyfacilitate the mixing of the chemicals on the wafer surfaces with therinse liquid and scrub the wafer surfaces.

A megasonic 151 may also be used in connection with the rinse dryer 110'of the present invention. Megasonic 151 is operatively associated withbase 112 of chamber 111, and employs radiofreqency waves to vibratewafers 105 and rinse liquid in order to further facilitate cleaning ofthe former. Exemplary megasonics that are useful with rinse dryer 110'include that manufactured by Verteq, Inc. of Santa Ana, Calif. and thosemanufactured by SubMicron Systems Corporation of Allentown, Pa.

Referring again to FIG. 6, a preferred embodiment of drying fluidinjection assembly 124, which sprays a mist or vapor of drying fluidinto chamber 111, is shown. Preferably, drying fluid contacts and coversboth of the substantially flat, major surfaces of each wafer 105 toremove water therefrom. Drying fluid injection assembly 124 includes oneor more drying fluid injection heads 125, a drying fluid source 136, andone or more lines 138 which transport drying fluid from the source tothe drying fluid injection heads.

In the preferred embodiment of drying fluid injection assembly 124, thedrying fluid is misted or vaporized at ambient temperature, usingapparatus that are known in the art. Spray heads that will create adrying fluid mist are known to those of ordinary skill in the relevantindustry. U.S. Pat. No. 5,653,045, issued to Ferrel, which is herebyincorporated by reference in its entirety, discloses an apparatus andmethod of vaporizing polar organic drying compounds. Alternatively, astream of drying fluid may be sprayed, dripped, flowed or otherwisedirected into chamber 111 through injection heads 125. Preferably, thedrying fluid is injected into chamber 111 at a low volumetric rate andvelocity to reduce the tendency of the drying fluid to mix with therinse liquid. The use of rinse liquid spray heads 123 to inject dryingfluid into chamber 111 is also within the scope of the presentinvention. The use of heated drying fluids and drying fluid vapors isalso within the scope of the present invention.

Gas injection assembly 140 includes injection nozzles 142, which injectgas into outer housing 101, a gas source 144, and a line whichtransports gas from the source to the nozzles. Preferably, the injectedgas is an inert gas (e.g., nitrogen, argon, etc.). The inert gasdisplaces the rinse liquid and drying fluid from chamber 111 andfacilitates the removal of residual drying fluid from the surfaces ofwafers 105. Gas injection assemblies, including each of theabove-identified elements and others, are known to those of ordinaryskill in the relevant art.

Rinse liquids which are useful in the apparatus and method of thepresent invention include, but are not limited to, DI water, diluteacids, dilute bases, and others. Drying fluids that are useful in theapparatus and method of the present invention have a lower surfacetension than the selected rinse liquid. Drying fluids which are usefulin the present invention and which have a lower surface tension thanmost useful rinse liquids include, without limitation, isopropylalcohol, propanol, 1-methoxy-2-propanol, di-acetone alcohol, and otherfluids. Drying fluid vapors which may be used in the apparatus andmethod according to the present invention include, without limitation,propanol-rich nitrogen gas; isopropyl alcohol-rich nitrogen gas;nitrogen with traces of isopropyl alcohol, propanol,1-methoxy-2-propanol, di-acetone alcohol, and others; argon with tracesof or saturated with an appropriate drying fluid; or other carrier gaseswhich include an appropriate drying fluid.

Referring again to FIG. 2, as an example of the use of the rinse dryer100 of the present invention, a group of wafers 105, which is positionedin a mutually parallel relationship on a wafer carrier 107, is placed inouter housing 101 on base 112 and secured thereto. Side walls 114, 118are then placed in their raised position. Wafers 105 are then rinsed.Any gases or vapors within outer housing 101 that are displaced by therinse liquid exit the outer housing through exhaust conduit 104. Oncechamber 111 becomes full with rinse liquid, and after wafers 105 havebeen rinsed, actuator 126 lowers side walls 114, 118 at a desired rateand rinse liquid exits housing 101 through drain 102.

Alternatively, side walls 114 and 118 may be placed in their raisedposition and chamber 111 filled with rinse liquid prior to placing theloaded wafer carrier 107 onto base 112. The side walls are then lowered,as previously described, to remove rinse liquid from chamber 111 andfrom the surfaces of wafers 105. This alternative use of the rinse dryer100 is advantageous in situations where a quench is desired ornecessary, for example, following a controlled etch of wafers 105 inorder to remove an etchant.

The apparatus of the present invention is also employed to dry wafers105. Drying fluid injection assembly 124 directs drying fluid onto thesurface of the rinse liquid. Preferably, drying fluid is injected intoouter housing 101 during the entire period of time during which sidewalls 114, 118 are being lowered. The manner in which the drying fluidis injected onto the surface of the rinse liquid is very important tothe drying process. More particularly, the size, velocity anddistribution of the drying fluid droplets must be carefully controlledin order to build a layer of the drying fluid film on the surface of therinse liquid without the two fluids mixing. Preferably, injection head125 directs the drying fluid at the surface of the rinse liquid at a lowenough volumetric rate and velocity that the tendency of the dryingfluid and rinse liquid to mix will be minimized.

As the drying fluid mist or vapor settles onto the exposed surface ofthe rinse liquid, it forms a film thereon which partially diffuses intothe rinse liquid. Preferably, the flow velocity of the drying fluid ontothe exposed surface of the rinse liquid is sufficient to build andmaintain the film as the drying fluid diffuses into the rinse liquid. Asthe rinse liquid is slowly drained from chamber 111, the film of dryingfluid is pulled onto the surfaces of wafers 105. The low surface tensionof the drying fluid relative to the surface tension of the rinse liquidforces the rinse liquid from the surface of wafers 105 in a uniformsheet, removing substantially all of the rinse liquid and leaving only asmall amount of drying fluid film on the surfaces of the wafers. This isknown as the Marangoni effect, and is described in detail in J. Marra,Ultraclean Marangoni Drying, PARTICLES IN GASES AND LIQUIDS 3:DETECTION, CHARACTERIZATION AND CONTROL (1993), the relevant disclosureof which is hereby incorporated by reference.

Preferably, as the rinse liquid and drying fluid are drained from outerhousing 101, they are displaced with a substantially inert gas, such asnitrogen, argon, or another gas, which is generally non-reactive withwafers 105 and will not contaminate the surfaces thereof. The displacinggas is pumped into outer housing 101 by gas injection assembly 140 (seeFIG. 6). Preferably, the displacing gas is heated to a temperature inthe range of from about 70° F. to about 185° F. to facilitate drying andto evaporate any remaining drying fluid from the surfaces of wafers 105.Excess gases and vapors exit outer housing 101 through exhaust conduit104.

After the rinse liquid and drying fluid flow over the upper edges ofside walls 114, 118, they are drained from outer housing 101 throughdrain 102. Preferably, as the rinse liquid and drying fluid flow throughdrain 102, the level of contaminants is measured by resistivity meter103. If the resistivity of the drained liquids is above the desiredlevel as measured by resistivity meter 103, the rinse and dry steps maybe repeated.

Although the foregoing description contains many specificities, theseshould not be construed as limiting the scope of the present invention,but as merely providing illustrations of some of the presently preferredembodiments. Similarly, other embodiments of the invention may bedevised which do not depart from the spirit or scope of the presentinvention. The scope of this invention is, therefore, indicated andlimited only by the appended claims and their legal equivalents, ratherthan by the foregoing description. All additions, deletions andmodifications to the invention as disclosed herein which fall within themeaning and scope of the claims are embraced within their scope.

What is claimed is:
 1. A method of cleaning a semiconductor wafer,comprising:disposing the semiconductor wafer into a chamber; introducinga quantity of rinse liquid into said chamber and in contact with asurface of the semiconductor wafer; and moving a portion of said chambersubstantially vertically relative to a remainder of said chamber so asto facilitate the removal of at least some of said quantity of rinseliquid from said chamber.
 2. The method of claim 1, wherein said movingsaid portion comprises moving at least a portion of a side wall of saidchamber.
 3. The method of claim 1, wherein said moving is effectedrelative to a base of said chamber.
 4. The method of claim 2, whereinsaid moving is effected relative to another portion of said side wall.5. The method of claim 1, wherein said moving said portion comprisesmoving substantially an entire side wall of said chamber.
 6. The methodof claim 1, wherein said moving said portion comprises moving opposingregions of a side wall of said chamber.
 7. The method of claim 1,wherein said moving said portion comprises collapsing said portion. 8.The method of claim 1, wherein said moving said portion comprisesbending said portion.
 9. The method of claim 1, wherein said moving saidportion is effected by an actuator.
 10. The method of claim 1, furthercomprising bubbling a substantially inert gas into said quantity ofrinse liquid.
 11. The method of claim 1, further comprising directing aquantity of drying fluid onto a surface of said quantity of rinseliquid.
 12. The method of claim 11, wherein said directing said quantityof drying fluid comprises forming a film on said surface of saidquantity of rinse liquid.
 13. The method of claim 11, further comprisingselecting said drying fluid to have a lower surface tension than saidquantity of rinse liquid.
 14. The method of claim 11, wherein saiddirecting said quantity of drying fluid comprises vaporizing at leastsome of said quantity of drying fluid.
 15. The method of claim 1,wherein said moving comprises moving said portion of said chamber at arate that minimizes friction as said quantity of rinse liquid movesacross the semiconductor wafer.
 16. The method of claim
 1. furthercomprising directing a gas that will not react substantially with amaterial of the semiconductor wafer or with a material on thesemiconductor wafer onto a surface of the semiconductor wafer.
 17. Themethod of claim 16, further comprising heating said gas.
 18. A method ofrinsing and drying at least one semiconductor wafer, comprising:placingthe at least one semiconductor wafer into a rinse/dry apparatusincluding container with a base and at least one wall extending upwardlyfrom said base, at least a portion of said at least one wall beingsubstantially vertically movable relative to said base; directing aquantity of rinse liquid over the at least one semiconductor wafer; andmoving said at least said portion of said at least one wall verticallyrelative to said base to remove said quantity of rinse liquid from therinse/dry apparatus.
 19. The method of claim 18, further comprisingdirecting a quantity of drying fluid onto a surface of said quantity ofrinse liquid.
 20. The method of claim 19, wherein said directing saidquantity of drying fluid is effected before said moving said at leastsaid portion of said at least one wall.
 21. The method of claim 19,wherein said directing said quantity of drying fluid comprises a forminga film on said surface of said quantity of rinse liquid.
 22. The methodof claim 19, further comprising selecting said quantity of drying fluidto have a lower surface tension than said quantity of rinse liquid. 23.The method of claim 19, wherein said directing said quantity of dryingfluid comprises vaporizing at least some of said quantity of dryingfluid.